Type:
Journal
Description:
A new method for the formation of hole-barrier contacts in high purity germanium (HPGe) is described, which consists in the sputter deposition of a Sb film on HPGe, followed by Sb diffusion produced through laser annealing of the Ge surface in the melting regime. This process gives rise to a very thin ( nm) n-doped layer, as determined by SIMS measurement, while preserving the defect-free morphology of HPGe surface. A small prototype of gamma ray detector with a Sb laser-diffused contact was produced and characterized, showing low leakage currents and good spectroscopy data with different gamma ray sources.
Publisher:
Springer Berlin Heidelberg
Publication date:
1 Mar 2018
Biblio References:
Volume: 54 Issue: 3 Pages: 34
Origin:
The European Physical Journal A