The evolution of the implantation damage during a Pulsed Laser thermal annealing process is investigated by means of an accurate modeling which could stimulates focused experimental analyses. The model is based on the simulation of the detailed kinetic of the defect system in the extremely far-from-equilibrium conditions caused by the laser irradiation in the non-melting, melting and partial melting regimes. It considers defect (interstitials Is and vacancies Vs) clustering and annihilation in presence of fast varying temperature, high ...
29 Sep 2009
Advanced Thermal Processing of Semiconductors, 2009. RTP'09. 17th International Conference on